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| TB0640H - TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features NEW PRODUCT * * * * * * 100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and Low On-State Voltage B A Dim SMB Min 4.06 3.30 1.96 0.15 5.21 0.05 2.01 0.76 Max 4.57 3.94 2.21 0.31 5.59 0.20 2.62 1.52 A B C D Mechanical Data * * * * * * * * Case: SMB, Molded Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: None; Bi-Directional Devices Have No Polarity Indicator Weight: 0.093 grams (approx.) Marking: Date Code & Marking Code (See Page 4) Ordering Information: See Page 4 C D G E F G H H F E All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Non-Repetitive Peak Impulse Current Non-Repetitive Peak On-State Current Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Lead Thermal Resistance, Junction to Ambient Typical Positive Temperature Coefficient for Breakdown Voltage @10/1000us @8.3ms (one-half cycle) Symbol Ipp ITSM Tj TSTG RqJL RqJA DVBR/DTj Value 100 50 -40 to +150 -55 to +150 20 100 0.1 Unit A A C C C/W C/W %/C Maximum Rated Surge Waveform Waveform 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T, K20/K21 FCC Part 68 GR-1089-CORE Ipp (A) 500 400 250 200 160 100 0 IPP, PEAK PULSE CURRENT (%) 100 Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value 50 0 tr tp TIME DS30360 Rev. 3 - 2 1 of 4 TB0640H - TB3500H Electrical Characteristics @ TA = 25C unless otherwise specified On-State Voltage @ IT = 1A VT (V) 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 NEW PRODUCT Part Number Rated Repetitive Off-State Voltage VDRM (V) Off-State Leakage Current @ VDRM IDRM (uA) 5 5 5 5 5 5 5 5 5 5 5 Breakover Voltage VBO (V) 77 88 98 130 160 180 220 265 300 350 400 Breakover Current IBO Min (mA) 50 50 50 50 50 50 50 50 50 50 50 Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Holding Current IH Min (mA) 150 150 150 150 150 150 150 150 150 150 150 Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Off-State Capacitance CO (pF) 200 200 200 120 120 120 120 80 80 80 80 Marking Code TB0640H TB0720H TB0900H TB1100H TB1300H TB1500H TB1800H TB2300H TB2600H TB3100H TB3500H 58 65 75 90 120 140 160 190 220 275 320 T064H T072H T090H T110H T130H T150H T180H T230H T260H T310H T350H Symbol VDRM IDRM VBR IBR VBO IBO IH VT IPP CO Notes: Stand-off Voltage Parameter Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current On state voltage Peak pulse current Off-state capacitance NOTE: 2 NOTE: 1 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VT VDRM VBR VBO V DS30360 Rev. 3 - 2 2 of 4 TB0640H - TB3500H 100 NORMALIZED BREAKDOWN VOLTAGE 1.2 NEW PRODUCT I(DRM), OFF-STATE CURRENT (uA) 1.15 VBR= (TJ) VBR = (TJ = 25C) 10 1.1 1 1.05 0.1 VDRM = 50V 1 0.01 0.95 0.9 0.001 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 1 Off-State Current vs. Junction Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature 1.1 NORMALIZED BREAKOVER VOLTAGE 100 1.05 VBO = (TJ = 25C) IT, ON-STATE CURRENT (A) VBO= (TJ) 10 1 Tj = 25C 0.95 -50 -25 0 25 50 75 100 125 150 175 1 1 1.5 2 2.5 3 3.5 4 4.5 5 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1 T , JUNCTION TEMPERATURE (C) J Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.4 1.3 NORMALIZED HOLDING CURRENT 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50 -25 0 25 50 75 100 125 IH = (TJ) IH = (TJ = 25C) NORMALIZED CAPACITANCE CO= (VR) CO = (VR = 1V) Tj = 25C f = 1 Mhz VRMS = 1V 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Normalized Capacitance vs. Reverse Voltage Bias DS30360 Rev. 3 - 2 3 of 4 TB0640H - TB3500H Ordering Information (Note 3) Packaging Shipping NEW PRODUCT Device TB0640H-13 TB0720H-13 TB0900H-13 TB1100H-13 TB1300H-13 TB1500H-13 TB1800H-13 TB2300H-13 TB2600H-13 TB3100H-13 TB3500H-13 Notes: SMB 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW XXXXX Date Code Key Year Code 2002 2 XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week 2003 3 2004 4 DS30360 Rev. 3 - 2 4 of 4 TB0640H - TB3500H |
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